IPD034N06N3 G Infineon Technologies, IPD034N06N3 G Datasheet
IPD034N06N3 G
Manufacturer Part Number
IPD034N06N3 G
Description
MOSFET N-CH 60V 100A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD034N06N3_G.pdf
(9 pages)
Specifications of IPD034N06N3 G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.4 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 93µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
11000pF @ 30V
Power - Max
167W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD034N06N3 G
SP000451070
SP000451070