IPD200N15N3 G Infineon Technologies, IPD200N15N3 G Datasheet

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IPD200N15N3 G

Manufacturer Part Number
IPD200N15N3 G
Description
MOSFET N-CH 150V 50A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD200N15N3 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 90µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
1820pF @ 75V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-252
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.02 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
6 ns
Minimum Operating Temperature
- 55 C
Rise Time
11 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPD200N15N3 G
IPD200N15N3 GTR
SP000386665

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