BUZ73L Infineon Technologies, BUZ73L Datasheet

BUZ73L

Manufacturer Part Number

BUZ73L

Description

MOSFET N-CH 200V 7A TO-220AB

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheet

1.BUZ73L.pdf (10 pages)

Specifications of BUZ73L

Package / Case

TO-220AB

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

400 mOhm @ 3.5A, 5V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2V @ 1mA

Input Capacitance (ciss) @ Vds

840pF @ 25V

Power - Max

40W

Mounting Type

Through Hole

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.4 Ohm @ 5 V

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

7 A

Power Dissipation

40000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

BUZ73L
BUZ73LIN
BUZ73LX
BUZ73LXK
SP000011374

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BUZ73L

Manufacturer:

LINX

Quantity:

1 200

Company:

BOSTOCK HK LIMITED

Part Number:

BUZ73L

Manufacturer:

Company:

H&T Electronics

Part Number:

BUZ73L

Quantity:

Current page: 1 of 10
Download datasheet (2Mb)

SIPMOS

Rev. 2.3

• N channel

• Enhancement mode

• Avalanche-rated

• Logic Level

Type

BUZ 73 L

Maximum Ratings

Parameter

Continuous drain current

Pulsed drain current

Avalanche current,limited by T

Avalanche energy,periodic limited by T

Avalanche energy, single pulse

L = 3.67 mH, T

Gate source voltage

ESD-Sensitivity HBM as per MIL-STD 883

Power dissipation

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

= 7 A, V

= 28 ˚C

= 25 ˚C

Power Transistor

= 50 V, R

= 25 ˚C

200 V

= 25

jmax

7 A

Ω

jmax

0.4

DS(on )

Ω

Page 1

Symbol

Dpuls

stg

thJA

tot

thJC

Package

PG-TO220-3

Pin 1

55 / 150 / 56

-55 ... + 150

Values

≤

Class 1

120

6.5

Pb-free

Yes

3.1

Pin 2

BUZ 73L

2009-03-31

K/W

˚C

Unit

Pin 3

Related parts for BUZ73L

BUZ73L Summary of contents

Page 1

SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level V Type DS BUZ 73 L 200 V Maximum Ratings Parameter Continuous drain current ˚C C Pulsed drain current ...

Page 2

Electrical Characteristics 25˚C, unless otherwise specified j Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA ˚ Gate threshold voltage ...

Page 3

Electrical Characteristics 25˚C, unless otherwise specified j Parameter Dynamic Characteristics Transconductance ≥ 3 DS(on)max, D Input capacitance ...

Electrical Characteristics 25˚C, unless otherwise specified j Parameter Reverse Diode Inverse diode continuous forward current ˚C C Inverse diode direct current,pulsed ˚C C Inverse diode forward voltage ...