IPB200N15N3 G Infineon Technologies, IPB200N15N3 G Datasheet
IPB200N15N3 G
Manufacturer Part Number
IPB200N15N3 G
Description
MOSFET N-CH 150V 50A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD200N15N3_G.pdf
(12 pages)
Specifications of IPB200N15N3 G
Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 90µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
1820pF @ 75V
Power - Max
150W
Mounting Type
Surface Mount
Gate Charge Qg
31 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
57 S, 29 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Drain Source Voltage Vds
150V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-263
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPB200N15N3 G
IPB200N15N3 GTR
SP000414740
IPB200N15N3 GTR
SP000414740
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IPB200N15N3 G Summary of contents
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