BSC042NE7NS3 G Infineon Technologies, BSC042NE7NS3 G Datasheet

BSC042NE7NS3 G

Manufacturer Part Number

BSC042NE7NS3 G

Description

MOSFET N-CH 75V 100A TDSON-8

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Datasheet

1.BSC042NE7NS3_G.pdf (9 pages)

Specifications of BSC042NE7NS3 G

Package / Case

8-TSDSON

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

4.2 mOhm @ 50A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

100A

Vgs(th) (max) @ Id

3.8V @ 91µA

Gate Charge (qg) @ Vgs

69nC @ 10V

Input Capacitance (ciss) @ Vds

4800pF @ 37.5V

Power - Max

125W

Mounting Type

Surface Mount

Gate Charge Qg

52 nC

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

4.2 mOhms

Forward Transconductance Gfs (max / Min)

89 S, 44 S

Drain-source Breakdown Voltage

75 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

100 A

Power Dissipation

125 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

BSC042NE7NS3 G
BSC042NE7NS3 GTR

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