IPP040N06N3 G Infineon Technologies, IPP040N06N3 G Datasheet - Page 7

• Manufacturer Part Number: IPP040N06N3 G
• Description: MOSFET N-CH 60V 90A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP040N06N3 G

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 90µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 11000pF @ 30V
• Power - Max: 188W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 188000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 3.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000398032

13 Avalanche characteristics
I
15 Drain-source breakdown voltage
V
100
t
10
70
65
60
55
50
1
-60
1
R
T
T
I
-20
20
10
t
T
AV
j
60
[°C]
[µs]
100
100
140
1000
180
14 Typ. gate charge
V
16 Gate charge waveforms
Q
V
12
10
V
Q
8
6
4
2
0
0
V
I
Q
IPB037N06N3 G
20
40
Q
Q
gate
g
Q
[nC]
Q
60
IPP040N06N3 G
IPI040N06N3 G
80
Q
g ate
100