IPP50N10S3L-16 Infineon Technologies, IPP50N10S3L-16 Datasheet
IPP50N10S3L-16
Specifications of IPP50N10S3L-16
Available stocks
Related parts for IPP50N10S3L-16
IPP50N10S3L-16 Summary of contents
Page 1
... Product Summary PG-TO263-3-2 Marking 3N10L16 3N10L16 3N10L16 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =25A =25 °C tot stg page 1 IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value = 200 330 50 ±20 100 -55 ... +175 55/175/56 100 V 15 Unit °C 2008-04-09 ...
Page 2
... I DSS T =25 ° = =125 ° =16V, V =0V GSS =4.5V, I =50A DS(on =4.5V, I =50A SMD version SMD version page 2 IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 Values min. typ. max 1 100 - 1.2 1 100 - - 100 - 16.1 20.9 - 15.8 20.6 - 13.1 15.7 - 12.8 15.4 Unit K/W ...
Page 3
... PCB is vertical in still air. Rev. 1.1 Symbol Conditions C iss V =0V, V =25V oss f =1MHz C rss t d( d(off = = plateau =25° S,pulse = =25 ° =50V /dt =100A/µ page 3 IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 Values min. typ. max. - 3215 4180 - 730 - = 3 0 185 Unit pF 949 200 1 2008-04-09 ...
Page 4
... V DS Rev. 1.1 2 Drain current 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 [V] page 4 IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L- ≥ SMD 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-04-09 ...
Page 5
... Typ. transfer characteristics parameter 150 100 Rev. 1.1 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 4 3 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 30 -55 °C 25 °C 175 ° -60 [V] page 5 IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L- °C; SMD 3 [ SMD - 100 T [° 4 100 140 180 2008-04-09 ...
Page 6
... Typ. capacitances 300 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 °C 0.1 0.8 0 1.2 1.2 1.4 1.4 0.1 [V] [V] page 6 IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2008-04-09 ...
Page 7
... A 100 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.1 14 Typ. drain-source breakdown voltage V BR(DSS) 115 110 105 100 95 90 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L- -55 - 105 T [° 145 Q gate 2008-04-09 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPI50N10S3L-16, IPP50N10S3L-16 page 8 IPB50N10S3L-16 2008-04-09 ...
Page 9
... Revision History Version Rev. 1.1 Date 1.1 08.04.2008 1.1 08.04.2008 1.1 09.04.2008 page 9 IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 Changes Page 1: VGS changed from ±16V to ±20V Page 3: Footnote 2) added Page 1: EAS changed from 264mJ to 330mJ 2008-04-09 ...