IPP80N03S4L-03 Infineon Technologies, IPP80N03S4L-03 Datasheet
IPP80N03S4L-03
Specifications of IPP80N03S4L-03
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IPP80N03S4L-03 Summary of contents
Page 1
... Continuous drain current 2) Pulsed drain current Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 2.0 IPI80N03S4L-03, IPP80N03S4L-03 Product Summary DS(on),max I D PG-TO263-3-2 Marking 4N03L02 ...
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... =90 µA GS(th = DSS T =25 ° = =125 ° = =85 ° = GSS =4 =40 A DS( SMD version SMD version page 2 IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 Values min. typ. max 1 1.0 1 1000 = 100 - 2.8 3.2 - 2.5 2.9 - 2.3 2.7 - 2.0 2.4 Unit K µ 2007-03-09 ...
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... =25 ° S,pulse = =25 ° = /dt =100 A/µ 1.1K/W the chip is able to carry 192A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 Values min. typ. max. - 7500 9750 = 1900 2500 - 100 - = 110 - 3 0.6 0.9 ...
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... V DS Rev. 2.0 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L- ≥ SMD 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-03-09 ...
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... V GS Rev. 2.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 3 2 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 3.5 25 °C -55 °C 175 °C 3 2 [V] page 5 IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L- °C; SMD 3 100 150 I [ SMD -60 - 100 T [° 4 200 140 180 2007-03-09 ...
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... V SD Rev. 2.0 10 Typ. capacitances 800µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 1 0.8 1 1.2 1.4 [V] page 6 IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L- MHz [ j(start) 100°C 150° 100 t [µs] AV Ciss Coss Crss 25 30 25°C 1000 2007-03-09 ...
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... A 750 500 40 A 250 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 2.0 14 Typ. drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th) 80 100 120 [nC] page 7 IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L- -60 - 100 T [° 140 180 Q gate 2007-03-09 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 IPI80N03S4L-03, IPP80N03S4L-03 page 8 IPB80N03S4L-02 2007-03-09 ...
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... Revision History Version Rev. 2.0 IPI80N03S4L-03, IPP80N03S4L-03 Date page 9 IPB80N03S4L-02 Changes 2007-03-09 ...