IPB50R199CP Infineon Technologies, IPB50R199CP Datasheet
IPB50R199CP
Manufacturer Part Number
IPB50R199CP
Description
MOSFET N-CH 550V 17A TO-263
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPB50R199CP.pdf
(10 pages)
Specifications of IPB50R199CP
Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
199 mOhm @ 9.9A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
3.5V @ 660µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 100V
Power - Max
139W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.199 Ohm @ 10 V
Drain-source Breakdown Voltage
550 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17 A
Power Dissipation
139000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000236092
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB50R199CP
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
IPB50R199CP
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPB50R199CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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IPB50R199CP Summary of contents
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