BTS247Z E3043 Infineon Technologies, BTS247Z E3043 Datasheet

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BTS247Z E3043

Manufacturer Part Number
BTS247Z E3043
Description
MOSFET N-CH 55V 33A TO220-5
Manufacturer
Infineon Technologies
Series
TEMPFET®r
Datasheet

Specifications of BTS247Z E3043

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
2V @ 90µA
Gate Charge (qg) @ Vgs
90nC @ 10V
Input Capacitance (ciss) @ Vds
1730pF @ 25V
Power - Max
120W
Mounting Type
Through Hole
Package / Case
TO-220-5 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BTS247ZE3043
BTS247ZE3043NK
SP000012185
Data Sheet
Speed TEMPFET® ® ® ®
Type
BTS 247 Z
N-Channel
Enhancement mode
Logic Level Input
Analog driving possible
Fast switching up to 1 MHz
Potential-free temperature sensor with
Overtemperature protection
Avalanche rated
thyristor characteristics
Pin
1
2
3
4
5
V
55 V
DS
G
A
K
Symbol
G
A
D
K
S
R
18 m
Pin 2
Pin 4
Pin 1
DS(on)
• Green Product (RoHS Compliant)
• AEC Qualified
Function
Gate
Anode Temperature Sensor
Drain
Cathode Temperature Sensor
Source
Package
PG-TO220-5-3
PG-TO220-5-62 On Request
PG-TO-220-5-43 On Request
Temperature
Sensor
1
1
5
PG-TO220-5-62
D
Ordering Code
On Request
Pin 3 and TAB
S
Pin 5
Speed TEMPFET
Rev.1.3, 2009-12-04
PG-TO220-5-43
PG-TO220-5-3
BTS247Z

Related parts for BTS247Z E3043

BTS247Z E3043 Summary of contents

Page 1

Speed TEMPFET® ® ® ® N-Channel Enhancement mode Logic Level Input Analog driving possible Fast switching MHz Potential-free temperature sensor with thyristor characteristics Overtemperature protection Avalanche rated Type V DS BTS 247 ...

Page 2

Maximum Ratings Parameter Drain source voltage Drain-gate voltage Gate source voltage Nominal load current (ISO 10483 ...

Page 3

Thermal Characteristics Parameter Characteristics junction - case: Thermal resistance @ min. footprint Thermal resistance @ 6 cm Electrical Characteristics Parameter 25°C, unless otherwise specified j Static Characteristics Drain-source breakdown voltage = 0.25 ...

Page 4

Electrical Characteristics Parameter 25°C, unless otherwise specified j Dynamic Characteristics Forward transconductance , I V >2 DS(on)max D Input capacitance MHz GS DS ...

Page 5

Electrical Characteristics Parameter 25°C, unless otherwise specified j Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...

Page 6

Electrical Characteristics Parameter 25°C, unless otherwise specified j Sensor Characteristics Temperature sensor leakage current T = 150 ° Min. reset pulse duration = -40...+150 ° AK(on) V AK(Reset) <0.5V V 1)2) Recovery ...

Page 7

Maximum allowable power dissipation P = f(T ) tot C 130 W 110 100 - Typ. transient thermal impedance Z = ...

Page 8

Safe operating area I ); D=0.01; T =25° Rdson=Vds/ On-state resistance =12A f ...

Page 9

Typ. transfer characteristics 12V Typ. capacitances f=1 MHz ...

Page 10

Typ. gate charge Gate D puls BTS 247 0 max Data ...

Page 11

Package Outlines Figure 1 PG-TO220-5 0.8 1) Shear and punch direction no burrs this surface. Back side, heatsink contour All metal surfaces tin plated, except area of cut. Figure 2 PG-TO220-5-62 Data Sheet 9.9 ±0.2 A 9.5 ...

Page 12

Figure 3 PG-TO220-5-43 Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on ...

Page 13

Revision History Revision Date Changes 1.3 2009-12-04 updated package drawing of PG-TO220-5-62 1.2 2009-07-31 removed 100ms and DC line in SOA diagram 1.1 2008-11-10 all pages: added new Infineon logo Initial version of RoHS-compliant derivate of the BTS247Z Page ...

Page 14

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...

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