BSC600N25NS3 G Infineon Technologies, BSC600N25NS3 G Datasheet - Page 5

• Manufacturer Part Number: BSC600N25NS3 G
• Description: MOSFET N-CH 250V 25A TDSON-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSC600N25NS3 G

• Package / Case: 8-TSDSON
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 4V @ 90µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 2350pF @ 100V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 60 mOhms
• Forward Transconductance Gfs (max / Min): 49 S, 25 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSC600N25NS3 G; BSC600N25NS3 GTR

5 Typ. output characteristics
I
7 Typ. transfer characteristics
I
V
V
60
50
40
30
20
10
50
40
30
20
10
0
0
0
0
T
V
V
T
1
2
I R
2
V
V
DS
GS
4
[V]
[V]
3
6
4
5
8
6 Typ. drain-source on resistance
R
8 Typ. forward transconductance
g
80
70
60
50
40
30
20
10
I
100
0
80
60
40
20
0
0
I
0
T
V
T
10
10
20
I
I
D
D
[A]
[A]
BSC600N25NS3 G
30
20
40
30
50