SPA15N60C3 Infineon Technologies, SPA15N60C3 Datasheet

MOSFET N-CH 650V 15A TO-220

SPA15N60C3

Manufacturer Part Number
SPA15N60C3
Description
MOSFET N-CH 650V 15A TO-220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPA15N60C3

Package / Case
TO-220FP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 9.4A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
3.9V @ 675µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1660pF @ 25V
Power - Max
34W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
34000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
15A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000216325
SPA15N60C3IN
SPA15N60C3XK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPA15N60C3
Manufacturer:
INFINEON
Quantity:
5 000
Part Number:
SPA15N60C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
SPA15N60C3
Quantity:
10
Rev. 3.2
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
SPP15N60C3
SPI15N60C3
SPA15N60C3
Maximum Ratings
Parameter
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
Avalanche current, repetitive t
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation,
Reverse diode dv/dt
Cool MOS™ Power Transistor
I
Operating and storage temperature
D
D
C
C
=7.5A, V
=15A, V
= 25 °C
= 100 °C
DD
DD
=50V
=50V
T
PG-TO220FP
Package
PG-TO220
PG-TO262
C
6)
= 25°C
p
limited by T
AR
AR
limited by T
limited by T
jmax
Ordering Code
Q67040-S4600
Q67040-S4601
SP000216325
page 1
jmax
jmax
2)
PG-TO220FP
P-TO220-3-31
Symbol
I
I
E
E
I
V
V
P
T
dv/dt
D
D puls
AR
j ,
AS
AR
GS
GS
tot
Marking
15N60C3
15N60C3
15N60C3
T
stg
SPP15N60C3, SPI15N60C3
1
2
3
V
PG-TO262
DS
R
SPP_I
460
±20
±30
156
9.4
0.8
15
DS(on)
45
15
@ T
I
D
-55...+150
Value
jmax
15
SPA15N60C3
9.4
SPA
15
460
±20
±30
PG-TO220
0.8
2009-12-22
45
15
34
0.28
650
15
1)
1)
V/ns
Unit
A
A
mJ
A
V
W
°C
V
A

Related parts for SPA15N60C3

SPA15N60C3 Summary of contents

Page 1

... Rev. 3.2 PG-TO220FP P-TO220-3-31 Ordering Code Q67040-S4600 Q67040-S4601 SP000216325 Symbol puls jmax limited jmax limited jmax tot dv/dt page 1 SPP15N60C3, SPI15N60C3 SPA15N60C3 @ T 650 V DS jmax R 0.28 DS(on PG-TO262 PG-TO220 Marking 15N60C3 15N60C3 15N60C3 Value SPP_I SPA 9.4 9 460 460 0.8 0 ± ...

Page 2

... V =0V, V DSS DS GS =25° =150° =30V, V =0V V GSS GS DS =10V, I =9.4A V DS(on =25° =150° f=1MHz, open drain R G page 2 SPA15N60C3 Value Unit 50 V/ns Values Unit min. typ. max 0 260 °C Values Unit min. typ. max. 600 - - ...

Page 3

... R G d(off =480V, I =15A =480V, I =15A 10V =480V, I =15A V D (plateau) DD =400V, V < <T peak BR, DSS j j,max page 3 SPP15N60C3, SPI15N60C3 SPA15N60C3 Values min. typ. max 1660 - 540 - 127 - 10 =0/10V * while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V ...

Page 4

... Unit Symbol SPA 0.012 K/W C th1 0.023 C th2 0.043 C th3 0.176 C th4 0.371 C th5 2.522 C th6 th1 th th1 th2 th,n page 4 SPP15N60C3, SPI15N60C3 SPA15N60C3 Values min. typ 460 = 1300 Value SPP_I SPA 0.0002495 0.0002495 0.0009406 0.0009406 0.001298 0.001298 0.00362 0.00362 0.009046 ...

Page 5

... C SPP15N60C3 170 W 140 120 100 Safe operating area parameter : =25° 0.001 0. 0 Rev. 3.2 2 Power dissipation FullPAK = tot °C 100 120 160 Safe operating area FullPAK parameter page 5 SPP15N60C3, SPI15N60C3 SPA15N60C3 ) 100 ) DS = 25° 0.001 0. 0 120 °C 160 2009-12-22 ...

Page 6

... Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V 40 Vgs = Rev. 3.2 6 Transient thermal impedance FullPAK Z thJC parameter 0.01 single pulse - Typ. output characteristic parameter page 6 SPP15N60C3, SPI15N60C3 SPA15N60C3 = single pulse - =150° µ Vgs = 20V Vgs = 7V Vgs = 6V A Vgs = 5 ...

Page 7

... Drain-source on-state resistance R DS(on) parameter : I Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 7V Vgs = 20V Typ. gate charge DS(on)max GS parameter: I 150° page 7 SPP15N60C3, SPI15N60C3 SPA15N60C3 = 9 SPP15N60C3 1.6 Ω 1.2 1 0.8 0.6 0.4 98% typ 0.2 0 -60 - 100 = Gate = 15 A pulsed D SPP15N60C3 ...

Page 8

... Rev. 3.2 14 Avalanche SOA ≤ 150 °C par 2 Drain-source breakdown voltage V (BR)DSS 720 V 680 660 640 620 600 580 560 540 120 °C 160 - page 8 SPP15N60C3, SPI15N60C3 SPA15N60C3 ) AR T j(START) =25°C T j(START) =125° SPP15N60C3 - 100 2009-12-22 4 µ °C 180 T j ...

Page 9

... Typ. C stored energy oss E =f(V ) oss DS 15 µ 100 200 300 Rev. 3.2 18 Typ. capacitances parameter 400 V 600 V DS page 9 SPP15N60C3, SPI15N60C3 SPA15N60C3 ) DS =0V, f=1 MHz iss oss rss 100 200 300 400 V 600 V DS 2009-12-22 ...

Page 10

... Definition of diodes switching characteristics Rev. 3.2 SPP15N60C3, SPI15N60C3 page 10 SPA15N60C3 2009-12-22 ...

Page 11

... PG-TO220-3-1, PG-TO220-3-21 : Outline Rev. 3.2 SPP15N60C3, SPI15N60C3 page 11 SPA15N60C3 2009-12-22 ...

Page 12

PG-TO220-3 (Fully isolated) Dimensions in mm/ inches Rev 3.2 SPP16N50C3 SPI16N50C3, SPA16N50C3 24 page 12 2009-12-22 ...

Page 13

... PG-TO262-3-1/PG-TO262-3-21 (I²-PAK) Rev. 3.2 SPP15N60C3, SPI15N60C3 page 13 SPA15N60C3 2009-12-22 ...

Page 14

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 3.2 SPP15N60C3, SPI15N60C3 page 14 SPA15N60C3 2009-12-22 ...

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