SPI11N60CFD Infineon Technologies, SPI11N60CFD Datasheet
SPI11N60CFD
Manufacturer Part Number
SPI11N60CFD
Description
MOSFET N-CH 650V 11A TO-262
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPI11N60CFD.pdf
(12 pages)
Specifications of SPI11N60CFD
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
440 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 500µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.44 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000229994
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPI11N60CFD
Manufacturer:
INFINEON
Quantity:
12 500
0)
Qualified for industrial grade applications according to JEDEC
"
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SPI11N60CFD Summary of contents
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