SPA15N65C3 Infineon Technologies, SPA15N65C3 Datasheet

MOSFET N-CH 650V 15A TO220-3

SPA15N65C3

Manufacturer Part Number
SPA15N65C3
Description
MOSFET N-CH 650V 15A TO220-3
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPA15N65C3

Package / Case
TO-220-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 9.4A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
3.9V @ 675µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1600pF @ 25V
Power - Max
34W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
34000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
15A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000293730

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPA15N65C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
SPA15N65C3
Quantity:
4 800
Rev. 2.0
Features
• Low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
CoolMOS
Type
SPA15N65C3
TM
Power Transistor
3)
j
Package
PG-TO220-3-31
=25 °C, unless otherwise specified
2)
AR
AR
1)
2),3)
3),4)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
j
AS
AR
GS
tot
, T
Marking
15N65C3
stg
T
T
T
I
I
V
static
AC (f >1 Hz)
T
M3 and M3.5 screws
D
D
page 1
C
C
C
C
DS
=3 A, V
=5 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...480 V
DD
DD
=50 V
=50 V
Product Summary
V
R
Q
DS
DS(on),max
g,typ
-55 ... 150
Value
460
±20
±30
9.4
0.8
5.0
15
45
50
34
50
PG-TO220-3-31
SPA15N65C3
0.28
650
63
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
V
nC
2008-03-12

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SPA15N65C3 Summary of contents

Page 1

... Marking 15N65C3 Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse = 2), = 3), =0...480 static >1 Hz =25 °C tot stg M3 and M3.5 screws page 1 SPA15N65C3 650 V 0.28 Ω PG-TO220-3-31 Value Unit 15 A 9.4 45 460 mJ 0.8 5 V/ns ±20 V ± -55 ... 150 °C 50 Ncm 2008-03-12 ...

Page 2

... D V =600 DSS T =25 ° =600 =150 ° = GSS = =9 DS(on) T =25 ° = =9 =150 ° MHz, open drain G page 2 SPA15N65C3 Value Unit Values Unit min. typ. max 3.7 K 260 °C 650 - - V 2.1 3 3.9 - 0.5 25 µ 100 nA Ω - 0.25 0.28 - 0.68 - Ω - 1.4 ...

Page 3

... =6.8 Ω d(off =480 plateau = =25 ° =480 /dt =100 A/µ rrm AV while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss DS page 3 SPA15N65C3 Values Unit min. typ. max. - 1600 - pF - 540 - - 120 - - 5 1.0 1 420 - µ *f. AR DSS. ...

Page 4

... D 0 0.2 0.1 0.05 0. 0.01 single pulse -2 10 Rev. 2.0 2 Safe operating area I =f parameter 120 160 [° Typ. output characteristics I =f parameter [s] p page 4 SPA15N65C3 ); T =25 ° limited by on-state resistance 10 µs 100 µ [ =25 ° µ 2008-03-12 ...

Page 5

... V 7 Drain-source on-state resistance DS(on 0.8 0.6 0 0 Rev. 2.0 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter Typ. transfer characteristics = =f parameter typ 100 150 0 [°C] j page 5 SPA15N65C3 ); T =150 ° 6 [A] D |>2 DS(on)max j 25°C 150° [ 2008-03-12 ...

Page 6

... Forward characteristics of reverse diode I =f parameter 120 V 480 [nC] 12 Drain-source breakdown voltage V =f(T BR(DSS) 740 720 700 680 660 640 620 600 580 100 140 180 -50 [°C] j page 6 SPA15N65C3 j 150 °C, 98% 25 °C 25 °C, 98% 150 °C 0.5 1 1 =0. - 110 T [° 150 2008-03-12 ...

Page 7

... Typ. capacitances C =f MHz Ciss 3 10 Coss 2 10 Crss 100 200 V Rev. 2.0 14 Typ. Coss stored energy E = f(V oss 300 400 500 0 [V] DS page 7 SPA15N65C3 ) 100 200 300 400 500 V [V] DS 600 2008-03-12 ...

Page 8

... Definition of diode switching characteristics Rev. 2.0 page 8 SPA15N65C3 2008-03-12 ...

Page 9

... PG-TO220-3-31/-3-111: Outline/Fully isolated package (2500VAC; 1 minute) Rev. 2.0 page 9 SPA15N65C3 2008-03-12 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 SPA15N65C3 2008-03-12 ...

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