IPI60R165CP Infineon Technologies, IPI60R165CP Datasheet
IPI60R165CP
Manufacturer Part Number
IPI60R165CP
Description
MOSFET N-CH 650V 21A TO-262
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Specifications of IPI60R165CP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
165 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
3.5V @ 790µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
2000pF @ 100V
Power - Max
192W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
21A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
165mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.165 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
192 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000276736
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPI60R165CP
Manufacturer:
Infineon Technologies
Quantity:
135
Company:
Part Number:
IPI60R165CP
Manufacturer:
INFINEON
Quantity:
12 500
W
for industrial grade applications
; Halogen free mold compound
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IPI60R165CP Summary of contents
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