IPP60R299CP Infineon Technologies, IPP60R299CP Datasheet
IPP60R299CP
Manufacturer Part Number
IPP60R299CP
Description
MOSFET N-CH 650V 11A TO-220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Specifications of IPP60R299CP
Package / Case
TO-220-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.5V @ 440µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 100V
Power - Max
96W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.299 Ohm @ 10 V
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
96000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
11A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
299mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPP60R299CPIN
IPP60R299CPX
IPP60R299CPXK
IPP60R299CPXTIN
IPP60R299CPXTIN
SP000084280
IPP60R299CPX
IPP60R299CPXK
IPP60R299CPXTIN
IPP60R299CPXTIN
SP000084280
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPP60R299CP
Manufacturer:
INFINEON
Quantity:
12 000
for industrial grade applications
; Halogen free mold compound
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IPP60R299CP Summary of contents
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