SPA11N80C3 Infineon Technologies, SPA11N80C3 Datasheet
SPA11N80C3
Specifications of SPA11N80C3
SPA11N80C3IN
SPA11N80C3X
SPA11N80C3XK
SPA11N80C3XTIN
SPA11N80C3XTIN
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SPA11N80C3 Summary of contents
Page 1
... Power dissipation 25°C C Operating and storage temperature Rev. 2.4 Ordering Code Q67040-S4438 Symbol puls jmax limited jmax limited jmax tot Page 1 SPP11N80C3 SPA11N80C3 800 0.45 DS(on PG-TO220-3-31 PG-TO220 P-TO220-3-31 Marking 11N80C3 11N80C3 Value SPP SPA 7.1 7 470 470 0.2 0 ±20 ±20 ± ...
Page 2
... V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =7.1A V DS(on =25° =150° f=1MHz, open drain R G Page 2 SPP11N80C3 SPA11N80C3 Value Unit 50 V/ns Values Unit min. typ. max 0 260 °C Values Unit min. typ. max. 800 - - ...
Page 3
... d(on =11A =7.5Ω d(off =640V, I =11A =640V, I =11A 10V =640V, I =11A V D (plateau) DD Page 3 SPP11N80C3 SPA11N80C3 Values min. typ. max 1600 - 800 - 40 - 44 =0/10V * while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss DS ...
Page 4
... Unit Symbol SPA 0.012 K/W C th1 0.023 C th2 0.043 C th3 0.176 C th4 0.371 C th5 2.522 C th6 th1 th th1 th2 th,n Page 4 SPP11N80C3 SPA11N80C3 Values min. typ 550 = 1000 Value SPP SPA 0.0002493 0.0002493 0.0009399 0.0009399 0.001298 0.001298 0.003617 0.003617 0.009186 0.00802 ...
Page 5
... Power dissipation tot C SPP11N80C3 170 W 140 120 100 Safe operating area parameter : =25° 0.001 0. 0 Rev. 2.4 2 Power dissipation FullPAK = tot °C 100 120 160 Safe operating area FullPAK parameter Page 5 SPP11N80C3 SPA11N80C3 ) 100 120 ) DS = 25° 0.001 0. 0 °C 160 2005-08-24 ...
Page 6
... Typ. output characteristic =25° parameter µ 20V Rev. 2.4 6 Transient thermal impedance FullPAK Z thJC parameter 0.01 single pulse Typ. output characteristic parameter 6. 5. Page 6 SPP11N80C3 SPA11N80C3 = 0.01 single pulse - =150° µ 20V 6. 5. 2005-08-24 ...
Page 7
... Rev. 2.4 10 Drain-source on-state resistance R DS(on) parameter : I 2.6 Ω 2.2 1.8 1.6 1.4 1.2 6V 0.8 6.5V 0.6 20V 0.4 0 Typ. gate charge V DS(on)max GS parameter: I 25°C 150° Page 7 SPP11N80C3 SPA11N80C3 = 7 SPP11N80C3 2 1 98% typ 0 -60 - 100 = Gate = 11 A pulsed D SPP11N80C3 0 max 0 max ...
Page 8
... Rev. 2.4 14 Avalanche SOA par 2 Drain-source breakdown voltage V (BR)DSS 980 V 940 920 900 880 860 840 820 800 780 760 740 720 100 120 °C 150 T j Page 8 SPP11N80C3 SPA11N80C3 ) AR ≤ 150 ° j(START) =25° j(START) =125° SPP11N80C3 -60 - 100 µs ...
Page 9
... Typ. C stored energy oss E =f(V ) oss DS 12 µ 100 200 300 400 Rev. 2.4 18 Typ. capacitances parameter 500 600 V 800 V DS Page 9 SPP11N80C3 SPA11N80C3 ) DS =0V, f=1 MHz iss oss 1 C rss 0 0 100 200 300 400 500 600 800 2005-08-24 ...
Page 10
... Definition of diodes switching characteristics Rev. 2.4 Page 10 SPP11N80C3 SPA11N80C3 2005-08-24 ...
Page 11
... PG-TO220-3-1, PG-TO220-3-21 Rev. 2.4 Page 11 SPP11N80C3 SPA11N80C3 2005-08-24 ...
Page 12
... PG-TO220-3-31 (FullPAK) Rev. 2.4 Page 12 SPP11N80C3 SPA11N80C3 2005-08-24 ...
Page 13
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 Page 13 SPP11N80C3 SPA11N80C3 2005-08-24 ...