IPB60R099C6 Infineon Technologies, IPB60R099C6 Datasheet - Page 11

• Manufacturer Part Number: IPB60R099C6
• Description: MOSFET N-CH 600V 37.9A TO263
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPB60R099C6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 99 mOhm @ 18.1A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 37.9A
• Vgs(th) (max) @ Id: 3.5V @ 1.21mA
• Gate Charge (qg) @ Vgs: 119nC @ 10V
• Input Capacitance (ciss) @ Vds: 2660pF @ 100V
• Power - Max: 278W
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.09ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant