IPP030N10N3 G Infineon Technologies, IPP030N10N3 G Datasheet
IPP030N10N3 G
Manufacturer Part Number
IPP030N10N3 G
Description
MOSFET N-CH 100V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPI030N10N3_G.pdf
(10 pages)
Specifications of IPP030N10N3 G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
3.5V @ 275µA
Gate Charge (qg) @ Vgs
206nC @ 10V
Input Capacitance (ciss) @ Vds
14800pF @ 50V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000446588
# & '%
" # $
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IPP030N10N3 G Summary of contents
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