IPP028N08N3 G Infineon Technologies, IPP028N08N3 G Datasheet

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IPP028N08N3 G

Manufacturer Part Number
IPP028N08N3 G
Description
MOSFET N-CH 80V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP028N08N3 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.8 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
3.5V @ 270µA
Gate Charge (qg) @ Vgs
206nC @ 10V
Input Capacitance (ciss) @ Vds
14200pF @ 40V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
2.4mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-220
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0028 Ohms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000311978
Rev. 1.0
Features
• N-channel, normal level
• Excellent gate charge x R
• Very low on-resistance R
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
®
3 Power-Transistor
IPP028N08N3 G
PG-TO220-3
028N08N
2)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target application
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
IPI028N08N3 G
PG-TO262-3
028N08N
stg
T
T
T
I
T
D
page 1
C
C
C
C
=100 A, R
=25 °C
=100 °C
=25 °C
=25 °C
2)
GS
=25 Ω
Product Summary
V
R
I
D
DS
DS(on),max
IPP028N08N3 G IPI028N08N3 G
previous engineering
sample codes:
IPP02CN08N
-55 ... 175
55/175/56
Value
1430
100
100
400
±20
300
100
2.8
80
Unit
A
mJ
V
W
°C
V
mΩ
A
2008-01-25

Related parts for IPP028N08N3 G

IPP028N08N3 G Summary of contents

Page 1

... IPI028N08N3 G PG-TO262-3 028N08N Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω =100 =25 °C tot stg page 1 IPP028N08N3 G IPI028N08N3 2.8 mΩ 100 A previous engineering sample codes: IPP02CN08N Value Unit 100 A 100 400 1430 mJ ±20 V 300 W -55 ... 175 °C 55/175/56 2008-01-25 ...

Page 2

... DSS T =25 ° = =125 ° = GSS = =100 A DS(on = |>2 DS(on)max =100 (one layer, 70 µm thick) copper area for drain page 2 IPP028N08N3 G IPI028N08N3 G Values Unit min. typ. max 0.5 K 2.8 3.5 - 0.1 1 µ 100 - 1 100 nA - 2.4 2.8 mΩ - 2.8 4.2 Ω 187 ...

Page 3

... MHz C rss t d( =1.6 Ω I =100 d(off = =100 plateau oss =25 ° S,pulse =100 =25 ° = /dt =100 A/µ page 3 IPP028N08N3 G IPI028N08N3 G Values Unit min. typ. max. - 10700 14200 pF - 2890 3840 - 100 150 - 155 206 - 4 210 279 100 400 - 1.0 1 113 - ns - 317 - nC 2008-01-25 ...

Page 4

... Rev. 1.0 2 Drain current I =f 120 100 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ [V] DS page 4 IPP028N08N3 G IPI028N08N3 G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 0 10 2008-01-25 ...

Page 5

... DS(on)max parameter 300 250 200 150 100 175 ° Rev. 1.0 6 Typ. drain-source on resistance R =f(I DS(on) parameter [ Typ. forward transconductance g =f 250 200 150 100 25 ° [V] GS page 5 IPP028N08N3 G IPI028N08N3 =25 ° 4 5 100 150 I [A] D =25 ° 100 I [ 200 150 2008-01-25 ...

Page 6

... Typ. gate threshold voltage = =f(T GS(th) parameter 3.5 3 2.5 2 typ 1 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter [V] DS page 6 IPP028N08N3 G IPI028N08N3 2700 µA 270 µA - 100 140 T [° 175 °C, 98% 175 °C 25 °C 25 °C, 98% 0.5 1 1.5 V [V] SD 180 2 2008-01-25 ...

Page 7

... Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.0 14 Typ. gate charge V =f(Q GS parameter °C 100 °C 150 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPP028N08N3 G IPI028N08N3 =50 A pulsed gate 100 150 Q [nC] gate 200 Q g ate 2008-01-25 ...

Page 8

... PG-TO262-3 (I²-Pak) Rev. 1.0 IPP028N08N3 G IPI028N08N3 G page 8 2008-01-25 ...

Page 9

... PG-TO220-3 Rev. 1.0 IPP028N08N3 G IPI028N08N3 G page 9 2008-01-25 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPP028N08N3 G IPI028N08N3 G page 10 2008-01-25 ...

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