IRF7807TR International Rectifier, IRF7807TR Datasheet - Page 4

• Manufacturer Part Number: IRF7807TR
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7807TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7807/IRF7807A
portant characteristic; however, once again the impor-
tance of gate charge must not be overlooked since it
impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Q
verse recovery charge Q
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
of the converter and therefore sees transitions be-
tween ground and V
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
4
Typical Mobile PC Application
in circuit and correlates well with performance predic-
tions generated by the system models. An advantage
of this new technology platform is that the MOSFETs
it produces are suitable for both control FET and syn-
chronous FET applications. This has been demon-
strated with the 3.3V and 5V converters. (Fig 3 and
Fig 4). In these applications the same MOSFET IRF7807
was used for both the control FET (Q1) and the syn-
chronous FET (Q2). This provides a highly effective
cost/performance solution.
For the synchronous MOSFET Q2, R
The drain of Q2 is connected to the switching node
93
92
91
90
89
88
87
86
85
84
The performance of these new devices has been tested
1
1.5
Vin = 10V
Vin = 14V
Vin = 24V
2
3.3V Supply : Q1=Q2=IRF7807
in
. As Q1 turns on and off there is
2.5
Load Current (A)
rr
Figure 3
both generate losses that
3
3.5
ds(on)
4
oss
is an im-
and re-
4.5
5
the MOSFET on, resulting in shoot-through current .
The ratio of Q
potential for Cdv/dt turn on.
chine readable format at www.irf.com.
Figure 2: Q
95
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93
92
91
90
89
Spice model for IRF7807 can be downloaded in ma-
1
1.5
oss
Vin = 10V
Vin = 14V
Vin=24V
Characteristic
gd
2
/Q
5V Supply : Q1=Q2=IRF7807
gs1
must be minimized to reduce the
2.5
Load Current (A)
Figure 4
3
3.5
www.irf.com
4
4.5
5