IRF7807TR International Rectifier, IRF7807TR Datasheet - Page 6

• Manufacturer Part Number: IRF7807TR
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7807TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7807/IRF7807A
6
Figure 11. Typical Source-Drain Diode Forward Voltage
100
0.1
10
1
0.001
0.1
10
1
0.4
D = 0.50
0.20
0.10
0.05
0.02
0.01
T = 150 C
J
V
SD
0.5
Figure 13. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
,Source-to-Drain Voltage (V)
°
(THERMAL RESPONSE)
IRF7807
0.01
SINGLE PULSE
0.6
0.7
T = 25 C
J
0.1
V
t , Rectangular Pulse Duration (sec)
0.8
1
GS
°
= 0 V
0.9
1
Figure 12. Typical Source-Drain Diode Forward Voltage
0.1
10
1
0.4
1. Duty factor D = t / t
2. Peak T = P
T = 150 C
Notes:
J
10
V
SD
0.5
,Source-to-Drain Voltage (V)
J
°
IRF7807A
DM
0.6
x Z
1
thJA
P
2
100
DM
0.7
+ T
A
t
1
www.irf.com
T = 25 C
J
t
2
V
0.8
GS
°
= 0 V
1000
0.9