IRF9Z34NL International Rectifier, IRF9Z34NL Datasheet

MOSFET P-CH 55V 19A TO-262

IRF9Z34NL

Manufacturer Part Number
IRF9Z34NL
Description
MOSFET P-CH 55V 19A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF9Z34NL

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
620pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9Z34NL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9Z34NL
Manufacturer:
IR
Quantity:
12 500
Description
Absolute Maximum Ratings
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z34NL) is available for low-
profile applications.
I
I
I
P
P
V
E
I
E
dv/dt
T
T
R
R
AR
D
D
DM
2
AS
AR
J
STG
D
D
GS
Pak is suitable for high current applications because of
@ T
@ T
JC
JA
@T
Advanced Process Technology
Surface Mount (IRF9Z34NS)
Low-profile through-hole (IRF9Z34NL)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
@T
2
C
C
Pak is a surface mount power package capable of
A
C
= 25°C
= 25°C
= 100°C
= 25°C
on-resistance per silicon area.
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Parameter
Parameter
GS
GS
@ -10V
@ -10V
This
G
Typ.
300 (1.6mm from case )
–––
–––
D P a k
IRF9Z34NS/L
HEXFET
2
-55 to + 175
D
S
Max.
0.45
-5.0
± 20
180
-19
-14
-68
-10
3.8
6.8
68
®
R
T O -2 6 2
Power MOSFET
V
DS(on)
Max.
2.2
40
DSS
I
D
= -19A
PD - 9.1525
= -55V
= 0.10
Units
Units
°C/W
W/°C
V/ns
mJ
mJ
°C
W
W
A
V
A
8/25/97

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IRF9Z34NL Summary of contents

Page 1

... The 2 D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate typical surface mount application. The through-hole version (IRF9Z34NL) is available for low- profile applications. Absolute Maximum Ratings 25°C ...

Page 2

IRF9Z34NS/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT .5V 2 0µ ...

Page 4

IRF9Z34NS/L 1200 1000 800 ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.1 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 ...

Page 6

IRF9Z34NS 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V ...

Page 7

Peak Diode Recovery dv/dt Test Circuit * D.U Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode ...

Page 8

IRF9Z34NS Pak Package Outline 10.54 ( .415) 10.29 ( .405) 1.40 (.055 MAX. 2 1.78 (.070) 1.27 (.050 1.40 (.055) 3X 1.14 (.045) 5.08 ( .200 DIM ENS IO ...

Page 9

Package Outline TO-262 Outline Part Marking Information TO-262 IRF9Z34NS/L ...

Page 10

IRF9Z34NS/L Tape & Reel Information 2 D Pak TIO TIO N 33 0.0 0 (14 ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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