IRF7526D1 International Rectifier, IRF7526D1 Datasheet - Page 5

• Manufacturer Part Number: IRF7526D1
• Description: MOSFET P-CH 30V 2A MICRO8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7526D1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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1000
100
0.1
Fig 10. Typical On-Resistance Vs. Drain
10
0.00001
1.5
1.0
0.5
0.0
1
0
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1
(THERMAL RESPONSE)
0.0001
-I , D rain C urrent (A )
D
SINGLE PULSE
Current
2
V G S = -1 0V
V G S = -4.5V
0.001
Power Mosfet Characteristics
3
t , Rectangular Pulse Duration (sec)
1
0.01
4
A
0 . 6 0
0 . 5 0
0 . 4 0
0 . 3 0
0 . 2 0
0 . 1 0
Fig 11. Typical On-Resistance Vs. Gate
0.1
3
-V
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
6
, G ate-to-S ourc e V oltage (V )
1
J
Voltage
I
DM
= -2.0A
x Z
9
1
thJC
P
2
IRF7526D1
DM
+ T
10
C
t
1
1 2
t
2
5
100
1 5
A