IRF3415STRR International Rectifier, IRF3415STRR Datasheet - Page 3

• Manufacturer Part Number: IRF3415STRR
• Description: MOSFET N-CH 150V 43A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3415STRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

1000
1000
100
100
10
10
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
4
1
TOP
BOTTOM
V
V
DS
5
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
4.5V
GS
5.0V
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
J
6
4.5V
°
10
7
20us PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
T = 175 C
J
8
= 50V
o
°
9
100
10
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
1
Fig 2. Typical Output Characteristics
TOP
BOTTOM
I =
Fig 4. Normalized On-Resistance
D
V
37A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
4.5V
T , Junction Temperature ( C)
5.0V
J
, Drain-to-Source Voltage (V)
Vs. Temperature
20 40 60 80 100 120 140 160 180
IRF3415S/L
10
4.5V
20us PULSE WIDTH
T = 175 C
J
o
V
o
GS
=
10V
100