IRF7521D1TR International Rectifier, IRF7521D1TR Datasheet
IRF7521D1TR
Specifications of IRF7521D1TR
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IRF7521D1TR Summary of contents
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... Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. ...
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... Max. Forward voltage drop FM I Max. Reverse Leakage current RM C Max. Junction Capacitance t dv/dt Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET 25°C (unless otherwise specified) J Min. Typ. Max. Units Conditions 20 ––– ––– V ...
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VGS TO P 7.5V 5.0V 4.0V 3.5V 3.0V 2. 2.0V BOT TOM 1.5V 1 0.1 0.01 0 rain-to-S ourc e V oltage ( Fig 1. Typical Output Characteristics ...
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IRF7521D1 ...
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D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 1.0 0 2.5V GS 0.6 0.4 0.2 0.0 0.0 1.0 2.0 ...
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IRF7521D1 Schottky Diode Characteristics 0.1 0.0 0.2 0.4 0.6 Forwa lta Forward Votage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics ...
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TM Micro8 Package Details 0.2 5 (.010 0.0 8 ...
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IRF7521D1 TM Micro8 Tape & Reel ...