IRFB42N20D International Rectifier, IRFB42N20D Datasheet - Page 2

• Manufacturer Part Number: IRFB42N20D
• Description: MOSFET N-CH 200V 44A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB42N20D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 55 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 3430pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB42N20D

IRFB42N20D
Avalanche Characteristics
Diode Characteristics
Dynamic @ T
Static @ T
E
I
E
R
I
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
I
AR
GSS
DSS
d(on)
d(off)
SM
on
r
f
S
rr
2
V
fs
AS
AR
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Effective Output Capacitance
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
Min. Typ. Max. Units
21
–––
–––
–––
–––
––– 1860 2790
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.26 –––
3430 –––
5310 –––
–––
–––
–––
–––
–––
––– -100
–––
530
100
210
400
–––
–––
–––
220
––– 0.055
91
24
43
18
69
29
32
180
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
330
5.5
1.3
25
140
36
65
44
V/°C
µA
nA
nC
ns
nC
pF
ns
V
V
S
Typ.
A
V
–––
–––
–––
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
D
I
J
J
GS
GS
DS
DS
DS
GS
GS
DS
D
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 26A
= 25°C, I
= 25°C, I
= 26A
= 1.8
= 50V, I
= 160V
= 25V
= 0V, I
= 10V, I
= V
= 200V, V
= 160V, V
= 30V
= -30V
= 10V,
= 100V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 26A, V
= 26A
= 250µA
= 26A
= 26A
GS
GS
= 0V to 160V
Max.
= 1.0V, ƒ = 1.0MHz
= 160V, ƒ = 1.0MHz
510
26
33
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 0V
G
= 150°C
Units
S
+L
mJ
mJ
A
D
D
S
)