IRFB42N20D International Rectifier, IRFB42N20D Datasheet - Page 8

• Manufacturer Part Number: IRFB42N20D
• Description: MOSFET N-CH 200V 44A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB42N20D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 55 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 3430pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB42N20D

TO-220AB Part Marking Information
IRFB42N20D
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
Notes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
8
Repetitive rating; pulse width limited by
R
max. junction temperature.
Starting T
G
= 25 , I
N O TE S :
1 D IME N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 14.5 M, 19 82.
2 C O N TR O LLIN G D IM E N S IO N : IN C H
14.09 (.5 55 )
13.47 (.5 30 )
15 .24 (.6 00 )
14 .84 (.5 84 )
J
2.87 (.11 3)
2.62 (.10 3)
= 25°C, L = 1.45mH
AS
3X
2 .5 4 (.1 00)
= 26A, V
1.40 (.05 5)
1.15 (.04 5)
2 X
GS
10.5 4 (.4 15)
10.2 9 (.4 05)
1
=10V
2
3
4
3X
0.3 6 (.01 4)
6.47 (.2 55)
6.10 (.2 40)
0 .93 (.0 37 )
0 .69 (.0 27 )
This product has been designed and qualified for the Industrial market.
1.15 (.04 5)
4 .06 (.16 0)
3 .55 (.14 0)
MIN
3 .78 (.14 9)
3 .54 (.13 9)
M
- A -
B A M
Pulse width
I
C
T
as C
SD
Visit us at www.irf.com for sales contact information.5/01
J
oss
Data and specifications subject to change without notice.
3 O U TL IN E C O NF O R MS T O JE D E C O U TL IN E T O -2 20 A B .
4 H E A T S IN K & LE A D ME A S U R E ME N T S D O N O T IN C L U D E B U R R S .
Qualification Standards can be found on IR’s Web site.
175°C
eff. is a fixed capacitance that gives the same charging time
oss
26A, di/dt
while V
4 .69 (.18 5)
4 .20 (.16 5)
400µs; duty cycle
DS
110A/µs, V
is rising from 0 to 80% V
- B -
1.3 2 (.052)
1.2 2 (.048)
2 .92 (.115 )
2 .64 (.104 )
3X
DD
0.55 (.0 22)
0.46 (.0 18)
LE A D A S S IG N ME N T S
V
2%.
1 - G A TE
2 - D R A IN
3 - S O U R C E
4 - D R A IN
(BR)DSS
TAC Fax: [phone]
,
DSS
www.irf.com