IRFB42N20D International Rectifier, IRFB42N20D Datasheet - Page 4

• Manufacturer Part Number: IRFB42N20D
• Description: MOSFET N-CH 200V 44A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB42N20D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 55 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 3430pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB42N20D

IRFB42N20D
100000
10000
4
1000
100
1000
10
100
0.1
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
V
T = 175 C
0.4
V DS , Drain-to-Source Voltage (V)
Coss
Ciss
Crss
J
SD
Forward Voltage
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.6
°
10
T = 25 C
0.8
J
f = 1 MHZ
°
1.0
100
V
GS
1.2
SHORTED
= 0 V
1.4
1000
1000
100
0.1
20
16
12
10
8
4
0
Fig 8. Maximum Safe Operating Area
1
0
I =
1
D
Fig 6. Typical Gate Charge Vs.
Tc = 25°C
Tj = 175°C
Single Pulse
26A
20
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
40
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
60
V
V
V
DS
DS
DS
= 160V
= 100V
= 40V
80
FOR TEST CIRCUIT
SEE FIGURE
100
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100
100µsec
120
1msec
10msec
13
1000
140