IRLR3714 International Rectifier, IRLR3714 Datasheet - Page 2

• Manufacturer Part Number: IRLR3714
• Description: MOSFET N-CH 20V 36A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3714

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 670pF @ 10V
• Power - Max: 47W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR3714

Diode Characteristics
IRLR3714/IRLU3714
Dynamic @ T
Avalanche Characteristics
Static @ T
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
Symbol
E
I
V
R
Symbol
I
I
t
Q
t
Q
V
V
I
I
d(on)
d(off)
f
AR
r
S
DSS
SM
rr
rr
GSS
fs
2
AS
SD
V
oss
DS(on)
g
gs
gd
oss
iss
rss
(BR)DSS
GS(th)
rr
rr
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Diode Forward Voltage
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Min.
–––
–––
–––
–––
–––
–––
–––
1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
20
17
–––
–––
–––
––– 0.88 –––
–––
–––
–––
–––
140
36
Typ.
–––
670
470
0.022
–––
6.5
1.8
2.9
7.1
8.7
4.5
–––
–––
–––
–––
–––
–––
78
10
68
35
34
35
35
15
21
…
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.7
1.3
53
51
53
53
Max. Units
-200
–––
100
200
3.0
20
28
20
––– V/°C Reference to 25°C, I
m
nC
ns
pF
nC
nC
µA
nA
ns
ns
A
S
V
V
V
Typ.
–––
–––
I
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
showing the
p-n junction diode.
T
T
T
di/dt = 100A/µs ƒ
T
di/dt = 100A/µs ƒ
D
MOSFET symbol
integral reverse
V
V
V
V
V
V
V
V
D
DS
DS
GS
GS
DD
GS
GS
DS
J
J
J
J
G
GS
GS
GS
DS
DS
DS
GS
GS
= 14A
= 14A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8
= 10V
= 0V
= 10V
= 10V, I
= 4.5V
= 0V, V
= 10V
= 4.5V ƒ
= V
= 16V, V
= 16V, V
= 16V
= -16V
= 0V, I
= 10V, I
= 4.5V, I
GS
, I
D
S
DS
F
D
D
D
S
F
= 250µA
D
GS
Conditions
GS
= 18A, V
= 18A, V
Conditions
= 14A
= 250µA
Conditions
= 18A
= 10V
= 18A, V
= 18A, V
= 14A
Max.
= 0V
= 0V, T
72
14
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D
GS
R
= 1mA
ƒ
ƒ
GS
=10V
R
J
=10V
= 0V ƒ
= 125°C
G
= 0V ƒ
Units
mJ
A
D
S