IRLR3714 International Rectifier, IRLR3714 Datasheet - Page 4

• Manufacturer Part Number: IRLR3714
• Description: MOSFET N-CH 20V 36A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3714

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 670pF @ 10V
• Power - Max: 47W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR3714

IRLR3714/IRLU3714
1000.00
10000
4
1000
100.00
100
10.00
10
1.00
0.10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.0
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
1.0
Crss
Ciss
Coss
T J = 25°C
10
f = 1 MHZ
2.0
V GS = 0V
SHORTED
100
3.0
1000
100
0.1
Fig 8. Maximum Safe Operating Area
10
15
12
9
6
3
0
1
0

Fig 6. Typical Gate Charge Vs.
I
1
D
Tc = 25°C
Tj = 175°C
Single Pulse
=
14A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
4
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
8

V
V
DS
DS
10
= 16V
= 10V
12
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100µsec
10msec
1msec
16
100
20