IRLR3714 International Rectifier, IRLR3714 Datasheet - Page 6

MOSFET N-CH 20V 36A DPAK

IRLR3714

Manufacturer Part Number
IRLR3714
Description
MOSFET N-CH 20V 36A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR3714

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
9.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
670pF @ 10V
Power - Max
47W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLR3714

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IRLR3714/IRLU3714
Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
A S
4.5 V
V
R G
2 0 V
G
V D S
Q
t p
GS
t p
I A S
D .U .T
0 .0 1
L
Charge
Q
Q
V
GD
G
(B R )D SS
1 5 V
D R IV E R
+
-
V D D
A
150
120
90
60
30
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature
50
12V
V
GS
Same Type as D.U.T.
Vs. Drain Current
J
Current Regulator
75
.2 F
50K
3mA
Current Sampling Resistors
100
.3 F
I
G

TOP
BOTTOM
125
www.irf.com
D.U.T.
I
D
150
+
-
V
DS
( C)
°
I D
5.9A
10A
14A
175

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