HAT2165H Renesas Electronics America, HAT2165H Datasheet - Page 4

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HAT2165H

Manufacturer Part Number
HAT2165H
Description
MOSFET N-CH 30V 55A LFPAK
Manufacturer
Renesas Electronics America
Datasheet

Specifications of HAT2165H

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.3 mOhm @ 27.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
55A
Gate Charge (qg) @ Vgs
33nC @ 4.5V
Input Capacitance (ciss) @ Vds
5180pF @ 10V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
LFPAK
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Vgs(th) (max) @ Id
-

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HAT2165H
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
HAT2165H-EL
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RENESAS
Quantity:
47 000
Part Number:
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Manufacturer:
RENESAS/瑞萨
Quantity:
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Part Number:
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Renesas
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32 700
Part Number:
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Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
HAT2165H-EL-E
0
Part Number:
HAT2165HELE
Manufacturer:
RENESAS
Quantity:
5 591
HAT2165H
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Rev.6.00 Sep 20, 2005 page 2 of 7
Item
Symbol
V
V
R
R
V
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
Qgs
Qgd
t
t
I
I
V
GS(off)
|y
DS(on)
DS(on)
Qg
Rg
d(on)
d(off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
Min
±20
1.0
30
60
5180
1200
0.81
Typ
100
380
2.5
3.4
0.5
7.1
9.5
33
15
13
65
60
40
Max
1.06
±10
3.3
5.3
2.5
1
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
V
I
I
I
V
f = 1 MHz
V
I
V
V
Rg = 4.7
IF = 55 A, V
IF = 55 A, V
di
D
G
D
D
D
D
GS
DS
DS
DS
DD
GS
DD
F
= 10 mA, V
= 27.5 A, V
= 27.5 A, V
= 27.5 A, V
= 55 A
= ±100 A, V
/ dt = 100 A/ s
= ±16 V, V
= 30 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, I
10 V, R
Test Conditions
GS
GS
D
D
GS
GS
GS
GS
DS
GS
GS
L
= 1 mA
= 27.5 A,
= 0
= 0
DS
= 0.36 ,
DS
= 10 V
= 0
= 0
= 10 V
= 4.5 V
= 0,
= 4.5 V,
= 0
= 0
Note4
(Ta = 25°C)
Note4
Note4
Note4

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