BUZ21 Infineon Technologies, BUZ21 Datasheet

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BUZ21

Manufacturer Part Number
BUZ21
Description
MOSFET N-CH 100V 21A TO-220AB
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BUZ21.pdf (8 pages)

Specifications of BUZ21

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
75W
Mounting Type
Through Hole
Package / Case
TO-220AB
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Gate Charge (qg) @ Vgs
-
Other names
BUZ21E3260
BUZ21IN

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUZ21
Manufacturer:
NEWINORIG
Quantity:
12 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUZ21
Quantity:
1
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUZ21
Manufacturer:
INFINEON
Quantity:
5 000
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
BUZ21
Manufacturer:
ST
0
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUZ21/L
Manufacturer:
INFINEON
Quantity:
12 500
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUZ215
Manufacturer:
INFINEON
Quantity:
12 500
SIPMOS
Data Sheet
• N channel
• Enhancement mode
• Avalanche-rated
Type
BUZ 21
Maximum Ratings
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche current,limited by T
Avalanche energy,periodic limited by T
Avalanche energy, single pulse
I
L = 340 µH, T
Gate source voltage
Power dissipation
T
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
D
C
C
C
= 21 A, V
= 25 ˚C
= 25 ˚C
= 25 ˚C
®
Power Transistor
DD
j
= 25 ˚C
= 25 V, R
V
100 V
DS
GS
= 25
I
21 A
jmax
D
jmax
R
0.085
DS(on
)
1
Symbol
I
I
I
E
E
V
P
T
T
R
R
D
Dpuls
AR
j
stg
AR
AS
GS
tot
thJC
thJA
Package
TO-220 AB
Pin 1
G
-55 ... + 150
-55 ... + 150
55 / 150 / 56
Values
100
E
Ordering Code
C67078-S1308-A2
21
84
21
11
75
75
1.67
20
Pin 2
D
BUZ 21
Unit
A
mJ
V
W
˚C
K/W
Pin 3
05.99
S

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BUZ21 Summary of contents

Page 1

SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type V DS BUZ 21 100 V Maximum Ratings Parameter Continuous drain current ˚C C Pulsed drain current ˚C C Avalanche current,limited ...

Page 2

Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA ˚ Gate threshold voltage DS, D Zero ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C C Inverse diode direct current,pulsed ˚C C Inverse diode forward voltage ...

Page 5

Power dissipation tot tot Safe operating area parameter 0.01 , ...

Page 6

Typ. output characteristics parameter µ 75W tot ...

Page 7

Drain-source on-resistance (on) j parameter 0.28 0.24 R 0.22 DS (on) 0.20 0.18 0.16 0.14 98% 0.12 0.10 typ 0.08 0.06 0.04 0.02 0.00 ...

Page 8

Avalanche energy parameter 340 µH GS 110 ...

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