BSP296E6327 Infineon Technologies, BSP296E6327 Datasheet
BSP296E6327
Specifications of BSP296E6327
BSP296INTR
SP000011106
Related parts for BSP296E6327
BSP296E6327 Summary of contents
Page 1
SIPMOS Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Type Package PG-SOT223 BSP296 PG-SOT223 BSP296 Maximum Ratings Parameter Continuous drain ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
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Power dissipation tot A BSP296 1.9 W 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Safe operating area ...
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Typ. output characteristic parameter ° 3.7V 3.9V 4.1V 4.3V 1.6 4.5V 10V 1.4 1.2 1 0.8 0.6 0.4 0 0.5 1 ...
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Drain-source on-state resistance DS(on) j parameter : BSP296 2.8 Ω 2.4 2.2 2 1.8 1.6 1.4 1.2 1 98% 0.8 0.6 typ 0.4 0.2 0 -60 -20 ...
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Typ. gate charge parameter 1.1 A pulsed BSP296 0 max 0 max 6 0 max 4 ...
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Rev. 2.1 Page 8 BSP296 2009-08-18 ...