BSO201SP Infineon Technologies, BSO201SP Datasheet

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BSO201SP

Manufacturer Part Number
BSO201SP
Description
MOSFET P-CH 20V 14.9A 8-SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO201SP

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 14.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
14.9A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
128nC @ 4.5V
Input Capacitance (ciss) @ Vds
5962pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
8 m Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
- 14.9 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Other names
BSO201SPINTR
SP000012578

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO201SP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSO201SP H
Manufacturer:
TI
Quantity:
22 500
Part Number:
BSO201SP H
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSO201SPH
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
OptiMOS
Feature
• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Type
BSO201SP
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev.1.2
D
S
A
A
A
A
=-14.9A, V
=-14.9 A , V
=25°C
=70°C
=25°C
=25°C
DS
TM
DD
=-16V, di/dt=200A/µs, T
-P Power-Transistor
=-10V, R
Package
P-SO 8
GS
=25Ω
j
= 25 °C, unless otherwise specified
jmax
=150°C
Page 1
Symbol
I
I
E
dv/dt
V
P
T
D
D puls
j ,
AS
GS
tot
T
stg
S
S
S
G
1
2
3
4
Top View
-55... +150
55/150/56
Product Summary
V
R
I
8
7
6
5
SIS00062
D
Value
-14.9
-11.9
-59.6
DS
DS(on)
±12
248
2.5
D
D
D
D
-6
BSO201SP
2001-12-21
-14.9
-20
8
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A

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BSO201SP Summary of contents

Page 1

... Gate source voltage Power dissipation T =25°C A Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1 Symbol puls E AS dv/dt =150°C jmax tot stg Page 1 BSO201SP Product Summary V - DS(on) I -14 Top View SIS00062 Value Unit A -14.9 -11.9 -59.6 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Rev.1.2 Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSO201SP Values Unit min. typ. max K 110 - - 50 Values Unit min. typ. max. - -0.6 -0 ...

Page 3

... V =-10V, V =-4.5V d(on =-1A, R =6Ω d(off =-15V, I =-14. =-15V, I =-14.9A -4. (plateau) V =-15V, I =-14. =25° = =-10V /dt=100A/µ Page 3 BSO201SP Values Unit min. typ. max 5962 - pF - 2168 - - 781 - - 21 39 108.5 163 - 127 190 - -9.7 -14 -39.6 -59 - -85.5 -128 - -1 -3 -59.6 - -0.8 -1 2001-12-21 ...

Page 4

... A 2 BSO201SP - -10 0 - -10 -10 Rev.1.2 2 Drain current parameter: |V -16 A -12 -10 °C 100 120 160 Transient thermal impedance Z thJS parameter : K 120.0µ - Page 4 BSO201SP ) A |≥ 4 BSO201SP - 100 = BSO201SP single pulse - 120 °C 160 0.50 0.20 0.10 0.05 0.02 0. 2001-12-21 ...

Page 5

... DS(on) parameter: V 0.05 Ω Vgs = -2.5V 0.04 0.035 0.03 Vgs = -2.2V 0.025 0.02 0.015 0.01 Vgs = -1.8V 0.005 Typ. forward transconductance | f(I DS(on)max fs parameter µs 120 100 1 Page 5 BSO201SP = Vgs = - 2.2V Vgs = - 2.5V Vgs = - 3V Vgs = - 4.5V Vgs = - 10V =25° ...

Page 6

... Forward character. of reverse diode parameter -10 Ciss -10 Coss -10 Crss - Page -250 µ 1.6 V 1.2 98% 1 0.8 typ. 0.6 0.4 2% 0.2 0 -60 - µ BSO201SP °C typ 150 °C typ °C (98 150 °C (98 -0.4 -0.8 -1.2 -1.6 -2 BSO201SP 100 °C 160 2001-12-21 ...

Page 7

... BSO201SP -24.5 V -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 - Rev.1.2 14 Typ. gate charge |V GS parameter: I 100 °C 150 T j 100 °C 180 T j Page Gate = -14.9 A pulsed 0.2 VDS max. 0.5 VDS max. 6 0.8 VDS max 100 BSO201SP nC 140 |Q Gate | 2001-12-21 ...

Page 8

... Rev.1.2 Page 8 BSO201SP 2001-12-21 ...

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