IPD04N03LA G Infineon Technologies, IPD04N03LA G Datasheet
IPD04N03LA G
Specifications of IPD04N03LA G
IPD04N03LAG
IPD04N03LAGINTR
IPD04N03LAGXT
IPD04N03LAGXT
IPD04N03LAINTR
IPD04N03LAINTR
SP000017598
Related parts for IPD04N03LA G
IPD04N03LA G Summary of contents
Page 1
... C T =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA (SMD version) 3.8 mΩ IPU04N03LA P-TO251-3-1 04N03LA Value Unit 350 600 mJ 6 kV/µs ±20 V 115 W -55 ... 175 °C 55/175/56 2008-04-11 ...
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... DS( SMD version SMD version |>2 DS(on)max = =1.3 K/W the chip is able to carry 136 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Values Unit min. typ. max 1.3 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 4.8 5.9 mΩ ...
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... DS C oss f =1 MHz C rss t d( =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Values Unit min. typ. max. - 3909 5199 pF - 1488 1979 - 174 261 - 6 6.3 8 350 - 0.89 1 2008-04-11 ...
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... Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0 0.01 0.001 0 10 100 10 [V] DS page 4 IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p 200 1 ...
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... Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 1.99 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f 120 100 ° [V] GS page 5 IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA =25 ° 3 3.4 V 3 [A] D =25 ° [ 100 60 2008-04-11 ...
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... Forward characteristics of reverse diode I =f parameter: T 1000 100 10 Crss 0.0 [V] DS page 6 IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA 800 µA 80 µA - 100 140 T [° °C 175 °C, 98% 175 °C 25 °C, 98% 0.5 1.0 1.5 V [V] SD 180 2.0 ...
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... Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.99 14 Typ. gate charge V =f(Q GS parameter °C 100 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA =25 A pulsed gate [nC] gate ate 2008-04-11 ...
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... Package Outline PG-TO252-3-11: Outline Rev. 1.99 IPD04N03LA G IPS04N03LA G PG-TO252-3-11 page 8 IPF04N03LA G IPU04N03LA G 2008-04-11 ...
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... Package Outline PG-TO252-3-23: Outline Footprint: Rev. 1.99 IPD04N03LA G IPS04N03LA G PG-TO252-3-23 page 9 IPF04N03LA G IPU04N03LA G 2008-04-11 ...
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... Package Outline Rev. 1.99 IPD04N03LA G IPS04N03LA G PG-TO251-3-11 page 10 IPF04N03LA G IPU04N03LA G 2008-04-11 ...
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... Package Outline Rev. 1.99 IPD04N03LA G IPS04N03LA G PG-TO251-3-21 page 11 IPF04N03LA G IPU04N03LA G 2008-04-11 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.99 IPD04N03LA G IPS04N03LA G page 12 IPF04N03LA G IPU04N03LA G ...