IPD05N03LA G Infineon Technologies, IPD05N03LA G Datasheet
IPD05N03LA G
Specifications of IPD05N03LA G
IPD05N03LAG
IPD05N03LAGINTR
IPD05N03LAGXT
IPD05N03LAGXT
IPD05N03LAINTR
IPD05N03LAINTR
SP000017599
Related parts for IPD05N03LA G
IPD05N03LA G Summary of contents
Page 1
... Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA (SMD version) 5.1 mΩ IPU05N03LA P-TO251-3-1 05N03LA Value Unit 350 300 mJ 6 kV/µs ± -55 ... 175 °C 55/175/56 2008-04-14 ...
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... DS( SMD version SMD version |>2 DS(on)max = =1.6 K/W the chip is able to carry 106 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA G Values Unit min. typ. max 1.6 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 6.9 8.6 mΩ ...
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... =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA G Values Unit min. typ. max. - 2413 3110 pF - 921 1225 - 112 167 - 7 4.8 6 3.9 5.0 - 5.2 7 350 - 0.91 1 2008-04-14 ...
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... Rev. 2.2 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0.1 0. 100 10 [V] DS page 4 IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p 200 1 ...
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... Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 2.2 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f ° [V] GS page 5 IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA =25 ° 3.8 V 3 [A] D =25 ° [A] D 4.1 V 100 60 2008-04-14 ...
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... Forward characteristics of reverse diode I =f parameter: T 1000 100 Crss [V] DS page 6 IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA 500 µA 50 µA - 100 140 T [° °C 175 °C, 98% 175 °C 25 °C, 87% 0.5 1.0 1.5 V [V] SD 180 2.0 ...
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... Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 2.2 14 Typ. gate charge V =f(Q GS parameter 100 °C 25 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA =25 A pulsed gate [nC] gate ate 2008-04-14 ...
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... Package Outline PG-TO252-3-11: Outline Rev. 2.2 IPD05N03LA G IPS05N03LA G PG-TO252-3-11 page 8 IPF05N03LA G IPU05N03LA G 2008-04-14 ...
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... Package Outline PG-TO252-3-23: Outline Footprint: Rev. 2.2 IPD05N03LA G IPS05N03LA G PG-TO252-3-23 page 9 IPF05N03LA G IPU05N03LA G 2008-04-14 ...
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... Package Outline PG-TO251-3-11: Outline Rev. 2.2 IPD05N03LA G IPS05N03LA G PG-TO251-3-11 page 10 IPF05N03LA G IPU05N03LA G 2008-04-14 ...
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... Package Outline Rev. 2.2 IPD05N03LA G IPS05N03LA G PG-TO251-3-21 page 11 IPF05N03LA G IPU05N03LA G 2008-04-14 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 IPD05N03LA G IPS05N03LA G page 12 IPF05N03LA G IPU05N03LA G ...