SPD06N80C3 Infineon Technologies, SPD06N80C3 Datasheet - Page 6

• Manufacturer Part Number: SPD06N80C3
• Description: MOSFET N-CH 800V 6A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD06N80C3

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3.9V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 785pF @ 100V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 8 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SO000318350; SP000077606; SPD06N80C3INTR; SPD06N80C3T; SPD06N80C3XT; SPD06N80C3XTINTR; SPD06N80C3XTINTR

Rev. 2.3
5 Typ. output characteristic
I
parameter: t
7 Drain-source on-state resistance
R
parameter : I
D
DS(on)
= f (V
A
5.5
4.5
3.5
2.5
1.5
0.5
11
9
8
7
6
5
4
3
2
1
0
4
3
2
1
0
-60
0
SPD06N80C3
DS
= f (T
); T
-20
p
5
D
j
= 10 µs, V
)
j
= 3.8 A, V
=150°C
10
20
98%
typ
15
60
GS
GS
= 10 V
100
20
20V
10V
8V
°C
V
7V
6V
5.5V
5V
4.5V
4V
T
V
j
DS
180
30
Page 6
6 Typ. drain-source on resistance
R
parameter: T
8 Typ. transfer characteristics
I
parameter: t
D
DS(on)
= f ( V
3.5
2.5
1.5
A
20
16
14
12
10
5
4
3
2
1
8
6
4
2
0
0
0
=f(I
GS
4V
2
D
); V
4.5V
p
)
j
2
=150°C, V
4
= 10 µs
DS
5V
6
4
2 x I
8
5.5V
GS
D
10
6
x R
6V
12
SPD06N80C3
DS(on)max
25°C
150°C
14
2005-10-05
8
16
A
I
V
V
7V
8V
10V
20V
D
GS
11
20