SPD50P03L Infineon Technologies, SPD50P03L Datasheet

no-image

SPD50P03L

Manufacturer Part Number
SPD50P03L
Description
MOSFET PCH -30V -50A TO252-5-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of SPD50P03L

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
126nC @ 10V
Input Capacitance (ciss) @ Vds
6880pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (5 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SPD50P03LINTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPD50P03L G
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
SPD50P03LG
Manufacturer:
INF
Quantity:
3 160
Part Number:
SPD50P03LG
Manufacturer:
INFINEON
Quantity:
111
Part Number:
SPD50P03LG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
SPD50P03LG
Quantity:
15 690
Company:
Part Number:
SPD50P03LG
Quantity:
4 800
Company:
Part Number:
SPD50P03LG
Quantity:
4 800
Rev. 1.4
Operating and storage temperature
0)
OptiMOS
Features
• P-Channel
• Enhancement mode
• Logic level
• 175°C operating temperature
• Avalanche rated
• dv /dt rated
• High current rating
• available with Pb-free lead-plating, RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
IEC climatic category; DIN IEC 68-1
Type
SPD50P03L
SPD50P03L
the lead-free type is indicated by a 'G' marking on the package next to the datecode
®
-P Small-Signal-Transistor
Package
P-TO252-5-3
PG-TO252-5-3
j
=25 °C, unless otherwise specified
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Ordering Code
Q67042-S4076
SP000086729
stg
T
T
T
I
I
di /dt =-200 A/µs,
T
T
D
D
C
C
C
j,max
C
=-50 A, R
=-50 A, V
page 1
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
1)
1)
DS
GS
Product Summary
V
R
I
=24 V,
Marking
50P03L
50P03L
=25
D
DS
DS(on),max
0)
-55…+175
55/175/56
Value
-200
256
±20
150
-50
-50
P-DSO-8
P-TO252-5-3
-6
SPD50P03L
-50
-30
7
2005-08-16
Unit
A
mJ
kV/µs
V
W
°C
V
m
A

Related parts for SPD50P03L

SPD50P03L Summary of contents

Page 1

... Marking Q67042-S4076 50P03L SP000086729 50P03L Symbol Conditions =25 ° =100 ° =25 °C D,pulse =- = =- = /dt di /dt =-200 A/µs, T =175 °C j,max =25 °C tot stg page 1 SPD50P03L - -50 A P-DSO-8 P-TO252-5-3 0) Value Unit -50 A -50 -200 256 mJ -6 kV/µs ±20 V 150 W -55…+175 °C 55/175/56 2005-08-16 ...

Page 2

... DSS T =25 ° =- =175 ° =- GSS =-4 DS(on =-50 A DS(on |>2 DS(on)max =- K/W the chip is able to carry 123 A. thJC 2 (one layer, 70 µm thick) copper area for drain page 2 SPD50P03L Values min. typ. max - -1 -0 -10 -100 = -10 -100 - 8.5 12.5 - 5.7 7 Unit K/W V µA nA mΩ ...

Page 3

... Rev. 1.4 Symbol Conditions C iss oss V =- MHz DS C rss t d(on d(off =- =- =- =- - =- =-50 A plateau =25 ° S,pulse = =25 ° =- =| /dt =100 A/µ page 3 SPD50P03L Values Unit min. typ. max. - 4590 6880 pF - 1220 1830 - 1000 1500 - 14 21 139 208 - 104 156 - -14 - -35 -53 - -95 -126 - -3 - -200 - -1 -1. 2005-08-16 ...

Page 4

... DS C parameter limited by on-state resistance Rev. 1.4 2 Drain current I =f 120 160 200 4 Max. transient thermal impedance Z =f(t thJC parameter µs 10 µ 100 µ [V] page 4 SPD50P03L |≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 160 200 - 2005-08-16 ...

Page 5

... Typ. transfer characteristics I =f |>2 DS(on)max parameter Rev. 1.4 6 Typ. drain-source on resistance R =f(I DS(on) parameter -2 [V] 8 Typ. forward transconductance g =f 100 25 °C 80 175 ° [V] page 5 SPD50P03L ); T =25 ° -4 120 -I [A] D =25 ° [ -6 -10 V 160 200 60 2005-08-16 ...

Page 6

... GS(th) 2.5 2 1.5 typ. 1 0.5 0 100 140 180 12 Forward characteristics of reverse diode I =f parameter: T 1000 100 Coss [V] page =-250 98%. typ. 2% -60 - 100 T [° °C, typ 175 °C, typ 25 °C, 98% 175 °C, 98% 0 0.5 1 1.5 -V [V] SD SPD50P03L 140 180 2 2.5 2005-08-16 ...

Page 7

... Drain-source breakdown voltage V =f =-250 A BR(DSS -60 - [°C] j Rev. 1.4 14 Typ. gate charge V =f(Q GS gate parameter °C 10 100 °C 8 150 ° 100 1000 0 16 Gate charge waveforms s(th (th) 100 140 180 page 7 SPD50P03L ); I =-50 A pulsed D DD - 100 -Q [nC] gate 120 Q gate 2005-08-16 ...

Page 8

... Package Outline P-TO252-5-3: Outline Footprint Dimensions in mm Rev. 1.4 Packaging Tape page 8 SPD50P03L 2005-08-16 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.4 page 9 SPD50P03L 2005-08-16 ...

Related keywords