BSS84LT1 ON Semiconductor, BSS84LT1 Datasheet - Page 2

• Manufacturer Part Number: BSS84LT1
• Description: MOSFET P-CH 50V 130MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BSS84LT1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 130mA
• Vgs(th) (max) @ Id: 2V @ 250µA
• Input Capacitance (ciss) @ Vds: 30pF @ 5V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BSS84LT1OSCT

1. Pulse Test: Pulse Width
2. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
SOURCE−DRAIN DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate−Source Threaded Voltage
Static Drain−to−Source On−Resistance
Transfer Admittance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Continuous Current
Pulsed Current
Forward Voltage (Note 2)
(V
(V
(V
(V
(V
(V
(V
0.6
0.5
0.4
0.3
0.2
0.1
0
GS
DS
DS
DS
DS
GS
DS
1
= 0 Vdc, I
= 25 Vdc, V
= 50 Vdc, V
= 50 Vdc, V
= V
= 5.0 Vdc, I
= 25 Vdc, I
V
DS
GS
= 10 V
, I
Figure 1. Transfer Characteristics
1.5
D
V
GS
D
= 250 mA)
D
, GATE−TO−SOURCE VOLTAGE (VOLTS)
= 250 mAdc)
D
GS
GS
GS
= 100 mAdc, f = 1.0 kHz)
= 100 mAdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc, T
2
300 ms, Duty Cycle
Characteristic
GS
J
=
2.5
= 125 C)
20 Vdc, V
TYPICAL ELECTRICAL CHARACTERISTICS
(T
V
V
A
− 55 C
DD
DD
3
= 25 C unless otherwise noted)
V
= −15 Vdc, I
= −15 Vdc, I
GS
DS
2%.
V
V
V
= 0 V, I
= 0 Vdc)
DG
DS
DS
R
3.5
25 C
L
= 5.0 Vdc
= 5.0 Vdc
= 5.0 Vdc
= 50 W
150 C
http://onsemi.com
S
D
D
= 130 mA
BSS84LT1
= −2.5 Adc,
= −2.5 Adc,
4
2
0.45
0.35
0.25
0.15
0.05
0.5
0.4
0.3
0.2
0.1
0
0
T
V
Symbol
J
R
V
1
(BR)DSS
= 25 C
t
t
I
C
I
DS(on)
GS(th)
C
C
V
|y
d(on)
d(off)
Figure 2. On−Region Characteristics
DSS
GSS
I
Q
SM
I
oss
t
t
rss
SD
iss
S
fs
r
f
T
V
|
DS
2
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
3
Min
0.9
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
4
5
6000
Typ
5.0
5.0
2.5
1.0
8.0
30
10
16
−
−
−
−
−
−
−
−
−
−
6
0.130
0.520
7
Max
0.1
2.0
2.2
15
60
10
10
−
−
−
−
−
−
−
−
−
−
8
V
GS
2.75 V
2.25 V
3.25 V
2.5 V
= 3.5 V
3.0 V
mAdc
nAdc
Unit
9
Vdc
Vdc
mS
pC
pF
ns
W
A
V
10