BSS84LT1 ON Semiconductor, BSS84LT1 Datasheet - Page 3

• Manufacturer Part Number: BSS84LT1
• Description: MOSFET P-CH 50V 130MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BSS84LT1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 130mA
• Vgs(th) (max) @ Id: 2V @ 250µA
• Input Capacitance (ciss) @ Vds: 30pF @ 5V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BSS84LT1OSCT

Figure 5. On−Resistance Variation with Temperature
1.8
1.6
1.4
1.2
0.8
0.6
2
1
9
8
7
6
5
4
3
2
−55
0
Figure 3. On−Resistance versus Drain Current
V
GS
= 4.5 V
0.1
−5
T
J
, JUNCTION TEMPERATURE ( C)
I
D
, DRAIN CURRENT (AMPS)
0.2
45
0.3
0.001
0.01
0.1
TYPICAL ELECTRICAL CHARACTERISTICS
1
0
0.4
Figure 7. Body Diode Forward Voltage
V
I
D
0.5
T
GS
95
25 C
= 0.52 A
J
= 150 C
V
= 10 V
SD
150 C
−55 C
V
I
D
0.5
GS
, DIODE FORWARD VOLTAGE (VOLTS)
= 0.13 A
http://onsemi.com
= 4.5 V
1.0
BSS84LT1
145
0.6
25 C
3
1.5
6.5
5.5
4.5
3.5
2.5
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
0
Figure 4. On−Resistance versus Drain Current
0
−55 C
2.0
V
T
V
DS
J
GS
= 25 C
= 40 V
= 10 V
0.1
2.5
500
Figure 6. Gate Charge
Q
I
T
D
, TOTAL GATE CHARGE (pC)
0.2
, DRAIN CURRENT (AMPS)
3.0
I
D
1000
0.3
= 0.5 A
0.4
150 C
1500
−55 C
25 C
0.5
2000
0.6