NTP75N03L09G ON Semiconductor, NTP75N03L09G Datasheet - Page 2

MOSFET N-CH 30V 75A TO220AB

NTP75N03L09G

Manufacturer Part Number
NTP75N03L09G
Description
MOSFET N-CH 30V 75A TO220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTP75N03L09G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 37.5A, 5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
75nC @ 5V
Input Capacitance (ciss) @ Vds
5635pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTP75N03L09GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTP75N03L09G
Manufacturer:
ON
Quantity:
12 500
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended pad size.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
MAXIMUM RATINGS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTP75N03L09
NTP75N03L09G
NTB75N03L09
NTB75N03L09G
NTB75N03L09T4
NTB75N03L09T4G
Drain−to−Source Voltage
Drain−to−Gate Voltage
Gate−to−Source Voltage − Continuous
Non−repetitive (tp ≤ 10 ms)
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy − Starting T
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
(RGS = 10 MW)
− Continuous @ T
− Continuous @ T
− Single Pulse (tp ≤ 10 ms)
Derate above 25°C
(V
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
DD
= 38 Vdc, V
GS
Device
C
C
= 25°C
= 100°C
(T
= 10 Vdc, L = 1 mH, I
J
= 25°C unless otherwise noted)
C
A
= 25°C (Note 1)
= 25°C
Rating
L
NTP75N03L09, NTB75N03L09
(pk) = 55 A, V
http://onsemi.com
DS
J
= 40 Vdc)
= 25°C
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−220
TO−220
D
D
D
D
2
2
2
2
2
PAK
PAK
PAK
PAK
T
Symbol
J
V
V
and T
R
R
R
V
V
E
I
P
DGB
T
DSS
I
I
DM
qJC
qJA
qJA
GS
GS
D
D
AS
D
L
800 Tape & Reel
800 Tape & Reel
stg
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
Shipping
−55 to 150
Value
1500
62.5
±20
±24
225
125
260
1.0
2.5
1.0
30
30
75
59
50
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Apk
mJ
°C
°C
W
W

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