NTP75N03L09G ON Semiconductor, NTP75N03L09G Datasheet - Page 7

• Manufacturer Part Number: NTP75N03L09G
• Description: MOSFET N-CH 30V 75A TO220AB
• Manufacturer: ON Semiconductor

Specifications of NTP75N03L09G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 37.5A, 5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 5V
• Input Capacitance (ciss) @ Vds: 5635pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTP75N03L09GOS

SEATING
PLANE
−T−
1
G
−B−
4
2
3
D
0.13 (0.005)
3 PL
S
10.66
*For additional information on our Pb−Free strategy and soldering
0.42
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
T
NTP75N03L09, NTB75N03L09
B
M
K
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
8.38
0.33
http://onsemi.com
C
CASE 418AA−01
ISSUE O
17.02
0.67
D
A
2
E
J
PAK
7
V
W
W
3.05
0.12
SCALE 3:1
1.016
0.04
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
inches
PER ANSI Y14.5M, 1982.
mm
5.08
0.20
STYLE 2:
DIM
PIN 1. GATE
A
B
C
D
G
K
M
E
F
J
S
V
2. DRAIN
3. SOURCE
4. DRAIN
0.340
0.380
0.160
0.020
0.045
0.310
0.018
0.090
0.280
0.575
0.045
MIN
0.100 BSC
INCHES
0.380
0.405
0.190
0.036
0.055
0.025
0.110
0.625
0.055
MAX
−−−
−−−
14.60
MILLIMETERS
MIN
8.64
9.65
4.06
0.51
1.14
7.87
0.46
2.29
7.11
1.14
2.54 BSC
10.29
15.88
MAX
9.65
4.83
0.92
1.40
0.64
2.79
1.40
−−−
−−−