SPD30N03S2L07T Infineon Technologies, SPD30N03S2L07T Datasheet
SPD30N03S2L07T
Specifications of SPD30N03S2L07T
Related parts for SPD30N03S2L07T
SPD30N03S2L07T Summary of contents
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OptiMOS ® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x R • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package SPD30N03S2L-07 PG-TO252-3-11 Q67042-S4091 Maximum Ratings, at ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
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Power dissipation tot C ≥ parameter SPD30N03S2L-07 150 W 120 110 100 100 120 140 ...
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Typ. output characteristic =25° parameter µs p SPD30N03S2L- 136W tot ...
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Drain-source on-state resistance DS(on) j parameter : SPD30N03S2L-07 16 Ω 98% 6 typ -60 - Typ. capacitances C ...
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Typ. avalanche energy par 260 mJ 220 200 180 160 140 120 100 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...