BTS110 Infineon Technologies, BTS110 Datasheet

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BTS110

Manufacturer Part Number
BTS110
Description
MOSFET N-CH 100V 10A TO-220
Manufacturer
Infineon Technologies
Series
TEMPFET®r
Datasheet

Specifications of BTS110

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
3.5V @ 1mA
Input Capacitance (ciss) @ Vds
600pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220AB
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs
-
Other names
SP000011184

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTS110
Manufacturer:
SIEMENS
Quantity:
2 000
Part Number:
BTS110
Manufacturer:
INFINEON
Quantity:
12 500
Type
BTS 110
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
Gate-source voltage
Continuous drain current,
ISO drain current
T
Pulsed drain current,
Short circuit current,
Short circuit dissipation,
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
Features
C
= 85 C,
N channel
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electrically shorted to the tab
V
GS
V
100 V
= 10 V,
DS
R
GS
V
= 20 k
DS
T
T
T
T
C
j
j
C
I
10 A
= 0.5 V
= – 55 ... + 150 C
= – 55 ... + 150 C
= 25 C
D
= 25 C
R
0.2
DS(on)
1
Symbol
V
V
V
I
I
I
I
P
P
T
R
R
D
D-ISO
D puls
SC
j
DS
DGR
GS
SCmax
tot
th JC
th JA
,
Package
TO-220AB
T
stg
Pin
100
100
10
1.75
40
37
500
40
– 55 ... + 150
E
55/150/56
Values
20
3.1
75
1
G
TEMPFET
Ordering Code
C67078-A5008-A2
2
D
Unit
V
A
W
K/W
®
C
BTS 110
3
S
1 2
19.02.04
3

Related parts for BTS110

BTS110 Summary of contents

Page 1

Features N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab V I Type DS D BTS 110 100 Maximum Ratings Parameter Drain-source voltage R Drain-gate voltage ...

Page 2

Electrical Characteristics unless otherwise specified. j Parameter Static Characteristics Drain-source breakdown voltage Gate threshold voltage ...

Page 3

Electrical Characteristics (cont’ unless otherwise specified. j Parameter Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage Reverse recovery time ...

Page 4

Examples for short-circuit protection – 55 ... + 150 C, unless otherwise specified. j Parameter Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time before short circuit j I Short-circuit protection SC ...

Page 5

P Max. power dissipation tot Typical output characteristics : t Parameter = Typ. drain-source on-state resistance DS(on) Parameter Safe operating area D DS ...

Page 6

Drain-source on-state resistance DS(on Parameter: = – Typ. transfer characteristic Parameter = 80 ...

Page 7

I Continuous drain current D V Parameter Typ. gate-source leakage current GSS Parameter Forward characteristics of ...

Page 8

Transient thermal impedance : Parameter = / thJC p 8 ® TEMPFET BTS 110 19.02.04 ...

Page 9

TO 220 AB Ordering Code Standard C67078-A5008-A2 9.9 4.4 9.5 3.7 1) 0.75 1.05 2.54 2.54 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 TO 220 AB SMD version ...

Page 10

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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