IPD05N03LB G Infineon Technologies, IPD05N03LB G Datasheet

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IPD05N03LB G

Manufacturer Part Number
IPD05N03LB G
Description
MOSFET N-CH 30V 90A DPAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD05N03LB G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.8 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
2V @ 40µA
Gate Charge (qg) @ Vgs
25nC @ 5V
Input Capacitance (ciss) @ Vds
3200pF @ 15V
Power - Max
94W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD05N03LBGXT
SP000016410
Rev. 1.8
Type
Package
Marking
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
®
2 Power-Transistor
IPD05N03LB G
PG-TO252-3-11
05N03LB
4)
j
=25 °C, unless otherwise specified
DS(on)
1)
product (FOM)
for target applications
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
IPS05N03LB G
PG-TO251-3-11
05N03LB
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
page 1
C
C
C
j,max
C
=90 A, R
=90 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
2)
3)
DS
GS
=20 V,
=25 Ω
Product Summary
V
R
I
D
DS
DS(on),max
IPD05N03LB G
-55 ... 175
55/175/56
Value
420
120
±20
90
74
94
6
IPS05N03LB G
30
4.8
90
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
2008-04-14

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IPD05N03LB G Summary of contents

Page 1

... Continuous drain current Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt 4) Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.8 IPD05N03LB G Product Summary DS(on),max 1) for target applications I D product (FOM) ...

Page 2

... Current is limited by bondwire; with See figure =150 °C and duty cycle D <0.25 for V j,max 5) Device 1.5 mm epoxy PCB FR4 with 6 cm connection. PCB is vertical in still air. Rev. 1.8 IPD05N03LB G Symbol Conditions R thJC R minimal footprint thJA cooling area =25 °C, unless otherwise specified ...

Page 3

... Symbol Conditions C iss = oss f =1 MHz C rss t d( =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse =78.125 =25 ° = /dt =400 A/µs F page 3 IPD05N03LB G IPS05N03LB G Values Unit min. typ. max. - 2400 3200 pF - 860 1100 - 110 160 - 4 3.9 5 420 - 0.93 1 2008-04-14 ...

Page 4

... Rev. 1.8 2 Drain current I =f 100 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µs 0 0.01 0.001 0 10 100 10 [V] DS page 4 IPD05N03LB G IPS05N03LB G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 single pulse 0. [s] p 200 ...

Page 5

... Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 1.8 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f 100 ° [V] GS page 5 IPD05N03LB G IPS05N03LB =25 ° 3.2 V 3.5 V 3.8 V 4 [A] D =25 ° [ 100 60 2008-04-14 ...

Page 6

... Forward characteristics of reverse diode I =f parameter: T 1000 100 Crss 0.0 [V] DS page 6 IPD05N03LB G IPS05N03LB 400 µA 40 µA - 100 140 T [° °C, 98% 25 °C 175 °C, 98% 175 °C 0.5 1.0 1.5 V [V] SD 180 2.0 2008-04-14 ...

Page 7

... T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.8 14 Typ. gate charge V =f(Q GS parameter °C 10 100 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD05N03LB G IPS05N03LB =45 A pulsed gate [nC] gate ate 2008-04-14 ...

Page 8

... Package Outline PG-TO252-3-11: Outline Rev. 1.8 IPD05N03LB G PG-TO252-3-11 page 8 IPS05N03LB G 2008-04-14 ...

Page 9

... Package Outline PG-TO251-3-11: Outline Rev. 1.8 IPD05N03LB G PG-TO251-3-11 page 9 IPS05N03LB G 2008-04-14 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.8 IPD05N03LB G page 10 IPS05N03LB G 2008-04-14 ...

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