IPD05N03LB G Infineon Technologies, IPD05N03LB G Datasheet
IPD05N03LB G
Specifications of IPD05N03LB G
SP000016410
Related parts for IPD05N03LB G
IPD05N03LB G Summary of contents
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... Continuous drain current Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt 4) Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.8 IPD05N03LB G Product Summary DS(on),max 1) for target applications I D product (FOM) ...
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... Current is limited by bondwire; with See figure =150 °C and duty cycle D <0.25 for V j,max 5) Device 1.5 mm epoxy PCB FR4 with 6 cm connection. PCB is vertical in still air. Rev. 1.8 IPD05N03LB G Symbol Conditions R thJC R minimal footprint thJA cooling area =25 °C, unless otherwise specified ...
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... Symbol Conditions C iss = oss f =1 MHz C rss t d( =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse =78.125 =25 ° = /dt =400 A/µs F page 3 IPD05N03LB G IPS05N03LB G Values Unit min. typ. max. - 2400 3200 pF - 860 1100 - 110 160 - 4 3.9 5 420 - 0.93 1 2008-04-14 ...
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... Rev. 1.8 2 Drain current I =f 100 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µs 0 0.01 0.001 0 10 100 10 [V] DS page 4 IPD05N03LB G IPS05N03LB G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 single pulse 0. [s] p 200 ...
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... Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 1.8 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f 100 ° [V] GS page 5 IPD05N03LB G IPS05N03LB =25 ° 3.2 V 3.5 V 3.8 V 4 [A] D =25 ° [ 100 60 2008-04-14 ...
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... Forward characteristics of reverse diode I =f parameter: T 1000 100 Crss 0.0 [V] DS page 6 IPD05N03LB G IPS05N03LB 400 µA 40 µA - 100 140 T [° °C, 98% 25 °C 175 °C, 98% 175 °C 0.5 1.0 1.5 V [V] SD 180 2.0 2008-04-14 ...
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... T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.8 14 Typ. gate charge V =f(Q GS parameter °C 10 100 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD05N03LB G IPS05N03LB =45 A pulsed gate [nC] gate ate 2008-04-14 ...
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... Package Outline PG-TO252-3-11: Outline Rev. 1.8 IPD05N03LB G PG-TO252-3-11 page 8 IPS05N03LB G 2008-04-14 ...
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... Package Outline PG-TO251-3-11: Outline Rev. 1.8 IPD05N03LB G PG-TO251-3-11 page 9 IPS05N03LB G 2008-04-14 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.8 IPD05N03LB G page 10 IPS05N03LB G 2008-04-14 ...