IPP048N06L G Infineon Technologies, IPP048N06L G Datasheet - Page 4

• Manufacturer Part Number: IPP048N06L G
• Description: MOSFET N-CH 60V 100A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP048N06L G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2V @ 270µA
• Gate Charge (qg) @ Vgs: 225nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 30V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0047 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP048N06L G; IPP048N06LGIN; IPP048N06LGX; IPP048N06LGXK; SP000204180

1 Power dissipation
P
3 Safe operating area
I
V
350
300
250
200
150
100
10
10
10
10
50
T
0
-1
2
1
0
10
0
-1
T
V
t
50
D
10
0
T
V
C
DS
100
[°C]
[V]
10
1
150
200
10
2
2 Drain current
I
4 Max. transient thermal impedance
Z
T
120
100
10
10
10
10
80
60
40
20
0
-1
-2
-3
t
0
10
0
V
-6
D t T
10
IPP048N06L G
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
10
IPB048N06L G
-2
150
10
-1
200
10
0