SPB35N10 G Infineon Technologies, SPB35N10 G Datasheet
SPB35N10 G
Specifications of SPB35N10 G
SPB35N10GXT
Related parts for SPB35N10 G
SPB35N10 G Summary of contents
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SIPMOS Power-Transistor Feature N-Channel Enhancement mode 1 75°C operating temperature Avalanche rated dv/dt rated Type Package SPB35N10 P-TO263-3-2 Maximum Ratings, °C, unless otherwise specified j Parameter Continuous ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
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Power dissipation tot C SPP35N10 160 W 120 100 100 120 140 160 3 Safe operating area ...
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Typ. output characteristic =25° parameter µ Typ. ...
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Drain-source on-state resistance DS(on) j parameter : SPP35N10 190 m 160 140 120 100 80 60 98% typ -60 - ...
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Typ. avalanche energy par 270 mJ 210 180 150 120 105 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...