SPB80N04S2-H4 Infineon Technologies, SPB80N04S2-H4 Datasheet - Page 4

• Manufacturer Part Number: SPB80N04S2-H4
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N04S2-H4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 148nC @ 10V
• Input Capacitance (ciss) @ Vds: 5890pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000016358; SPB80N04S2H4T

1 Power dissipation
P
parameter: V
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
= f (T
10
10
10
10
320
240
200
160
120
W
A
80
40
0
3
2
1
0
10
0
SPP80N04S2-H4
SPP80N04S2-H4
DS
-1
C
20
)
)
GS
40
≥ 6 V
60
10
0
C
80
= 25 °C
100 120 140 160
10
1
t
p
V
= 29.0µs
T
V
°C
100 µs
1 ms
C
DS
190
10
Page 4
2
2 Drain current
I
parameter: V
4 Max. transient thermal impedance
Z
parameter : D = t
D
thJC
= f (T
K/W
10
10
10
10
10
10
10
A
90
70
60
50
40
30
20
10
0
= f (t
-1
-2
-3
-4
-5
0
1
0
10
C
SPP80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
SPP80N04S2-H4
)
-7
20
p
)
10
single pulse
GS
40
-6
≥ 10 V
10
p
60
/T
-5
80
10
-4
100 120 140 160
10
SPI80N04S2-H4
-3
10
2003-05-08
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
°C
p
C
190
10
0